Ramped oxide formation method
US5123994A · kind A · utility
2Cited by
8References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 30, 1989 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | May 30, 2009 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02255
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming high quality oxides wherein semiconductor material is placed in an oxidizing environment and subjected to a predetermined concentration of oxygen. This oxygen concentration is increased over time until a predetermined amount of oxide has been formed. Once the predetermined amount of oxide has been formed, the semiconductor material/oxide interface is subjected to a burst of steam that passivates the interface thereby reducing the number of unreacted semiconductor material atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.