Process for forming one or more substantially pure layers in substrate material using ion implantation
US5124174A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 11, 1990 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Dec 11, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/5873
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process is disclosed for forming a substantially pure monocrystalline layer of an implantable element in a monocrystalline substrate material by (a) selecting an implantable element and a monocrystalline substrate material to be implanted which, at the temperatures to be used, have limited mutual solubility in one another and do not form any intermediate phases with one another; (b) implanting a sufficient amount of the implantable element in the substrate material to permit formation of the desired substantially pure layer of the implantable element in the substrate material; and (c) annealing the implanted substrate material to form the desired layer. The annealing step may not be required if the desired layer was formed during the implantation. Also disclosed is an article made by the process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.