Interrupted method for producing multilayered polycrystalline diamond films
US5124179A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 13, 1990 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Sep 13, 2010 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/279
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The method for depositing multilayers of PCD film onto the substrate comprises chemically depositing a polycrystalline diamond layers onto the substrate at deposition temperatures in the range of 650.degree. to 825.degree. C., interrupting the deposition process with a cool-down step and then depositing at least one other layer under the same deposition conditions. The method enables one to deposit PCD films having a thickness of at least 12 microns for applications on flat as well as curved substrates having wide use in the electronics industry. Thick PCD films of this invention have been found to be ideal for dissipating heat from radio frequency (RF) and microwave (MW) devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.