Method of producing field effect transistor
US5124272A · kind A · utility
325Cited by
10References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 13, 1990 |
| Grant date | Jun 23, 1992 |
| Priority date | — |
| Expiry date | Aug 13, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/021
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An impurity adsorption layer is selectively formed from a gas containing an impurity on a semiconductor surface. Solid-phase diffusion of the impurity is effected from the impurity adsorption layer into the semiconductor surface to form a source region and a drain region having a sufficiently small resistivity and an ultrashallow PN junction depth, thereby producing a metal-insulator semiconductor field-effect-transistor featuring fast operating speed and reduced dimensions.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.