Diffusion using a solid state source
US5126281A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 11, 1990 |
| Grant date | Jun 30, 1992 |
| Priority date | — |
| Expiry date | Sep 11, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/037
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Method for deposit of a p type dopant from a dopant layer into a predetermined region of a III-V semiconductor layer or multiple layers. The p type dopant is deposited in very high concentration in a semiconductor layer adjacent to the predetermined region. A second semiconductor layer, doped with a lower concentration of an n type dopant, is later deposited so that the high concentration p type dopant layer lies between the predetermined region and the n type dopant layer. The p type dopant is diffused into the predetermined region by thermally driven diffusion, which may be carried out at a lower temperature or for a shorter diffusion time interval than with conventional diffusion, and p type dopant diffusion may extend over greater distances.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.