Method for manufacturing an oxide superconducting thin-film
US5126320A · kind A · utility
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10Claims
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Key dates
| Filing date | Jun 26, 1991 |
| Grant date | Jun 30, 1992 |
| Priority date | — |
| Expiry date | Jun 26, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/816
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method is disclosed which comprises setting a substrate within a mixed gas atmosphere containing 0.1 to 5% of oxygen gas and a balance as an inert gas, and sputtering a target member containing Ln, M, Cu and O within that atmosphere to obtain an oxygen-deficient perovskite type oxide superconducting thin-film of substantially Ln:M:Cu:O=1:2:3:(7-.delta.), where Ln represents at least one element selected from the rare earth elements and M represents at least one element selected from the group consisting of Ba, Sr, and Ca. The oxide superconducting thin-film of that composition ratio has a critical temperature of over 77K.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.