Broadband quantum well LED
US5126803A · kind A · utility
15Cited by
19References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 11, 1991 |
| Grant date | Jun 30, 1992 |
| Priority date | — |
| Expiry date | Mar 11, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/812
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
An LED having a broadband emission spectrum. In one embodiment, the LED comprises a layered semiconductor structure of length L, the structure including an active layer comprising multiple asymmetric quantum wells. A pair of stripe electrodes is formed on a surface of the structure, to thereby form at least one optical cavity having a pumped length less than L. Currents to the cavities are controlled as a function of temperature to produce broadband emission over a range of temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.