Semiconductor pressure sensor device with two semiconductor pressure sensor chips and a method of manufacturing thereof
US5126813A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1991 |
| Grant date | Jun 30, 1992 |
| Priority date | — |
| Expiry date | Mar 6, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/351
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor pressure sensor device that can improve the measuring accuracy without providing a silicon base in attaching a semiconductor pressure sensor chip to a lead frame, and a method of manufacturing thereof is disclosed. The semiconductor pressure sensor device includes a die-bond adhesive 10 formed of a resilient material for fixing a semiconductor pressure sensor chip 50 to a lead frame 100, a wire bond receiving projection 4 provided in the diepad where the semiconductor pressure sensor chip 50 is attached for receiving pressure application force from the bottom of the semiconductor pressure sensor chip 50 at the time of wire bonding, and a supporting projection 11 for preventing distortion stress by the wire bond receiving projection 4 from being transmitted. Thermal distortion of the semiconductor pressure sensor chip 50 and the lead frame 100 is absorbed by die-bond adhesive 10. By wire bond receiving projection 4 and supporting projection 11, stress acting on the semiconductor pressure sensor chip 50 is decreased to improve the measuring accuracy.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.