Rapid wafer thinning process
US5127984A · kind A · utility
34Cited by
10References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 2, 1991 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | May 2, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30612
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for thinning a Gallium Arsenide (GaAs) layer on the backside of a wafer substrate is provided. The method involves spraying an etchant solution including NH.sub.4 OH and H.sub.2 O.sub.2, preferably in a 1:4 ratio, onto the GaAs layer as the wafer is rotated at approximately 2000 rpm. The etchant is sprayed through a plurality of spray nozzles. The process is capable of thinning a GaAs layer by about 500 .mu.m in approximately 14 to 18 minutes, depending on the etchant temperature and composition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.