Method of forming a thin film pattern with a trapezoidal cross section
US5127989A · kind A · utility
23Cited by
4References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 13, 1991 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | May 13, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32139
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides a method of forming a thin film pattern with a trapezoidal cross section. In this method, a resist pattern with an inverted-trapezoidal cross section is formed on a thin film. Using the resist pattern with the inverted-trapezoidal cross section as a mask, the thin film is dry-etched. A resist pattern is left with the resist pattern used as a mask. The resist pattern has a trapezoidal cross section.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.