Negative photoresist composition comprising a photosensitizer of a polyhalogen compound
US5128231A · kind A · utility
8Cited by
6References
8Claims
0Family size
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Key dates
| Filing date | Nov 29, 1991 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | Nov 29, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/146
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photoresist composition is disclosed. The photoresist composition comprises a base resin, a photosensitizer, and a solvent. The base resin comprises polyhydroxystyrene represented by the following structural formula (I): ##STR1## (wherein k is a positive integer). The photosensitizer comprises a polyhalogen compound(s). The photoresist composition of the present invention has dry etching resistance characteristics comparable to those of conventional positive novolak photoresist compositions and can form a resist pattern with a high resolution and vertical sidewall profiles. This makes microprocessing possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.