Process for separating image sensor dies and the like from a wafer that minimizes silicon waste
US5128282A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 4, 1991 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | Nov 4, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E10/547
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for separating image sensor dies and the like from a wafer in which pairs of separation grooves separating each row of dies are formed in the active side of the wafer, with the tab between each groove pair being substantially equal to the width of the dicing blade, cutting a single bottom groove in the inactive side of the wafer opposite to and spanning each pair of separation grooves, and aligning the dicing blade with the midpoint of the wall of one groove in each pair of grooves so as to cut between the rows of dies. In a second embodiment, a two-pass separation process is enabled in which the tab between separation grooves is slightly larger than the width of the dicing blade, with the dicing blade first aligned with the midpoint of one separation groove to cut one row of dies from the wafer together with part of the tab, with the blade realigned with the midpoint of the other separate groove to cut a second row of dies and the remainder of the tab.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.