Multi-value memory cell using resonant tunnelling diodes
US5128894A · kind A · utility
8Cited by
6References
12Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Sep 28, 1990 |
| Grant date | Jul 7, 1992 |
| Priority date | — |
| Expiry date | Sep 28, 2010 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2211/5614
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A memory cell for multi-value logic. Two devices with multiple peak folding characteristics, such as the V-I characteristics of resonant tunneling diodes, are connected in series across a power supply. Multiple stable operating points are established where the positive resistance portions of the respective folding voltage-current characteristics intersect and correspond to multiple quantized levels for storing information, creating a multi-valued memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.