Method for forming semiconductor crystal and semiconductor crystal article obtained by said method
US5130103A · kind A · utility
30Cited by
5References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 30, 1991 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Aug 30, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor crystals are formed by applying a semiconductor crystal forming treatment on a substrate having a free surface on which a deposition surface (S.sub.NDS) with a small nucleation density and a deposition surface (S.sub.NDL) with metal having a sufficiently small area for crystal growth only from a single nucleus and having a greater nucleation density (ND.sub.L) than the nucleation density (ND.sub.S) of the deposition surface (S.sub.NDS) are arranged adjacent to each other, thereby growing a semiconductor single crystal from the single nucleus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.