Low temperature organometallic deposition of metals

US5130172A · kind A · utility

Assignee

• The Regents of the University of California · US

Inventors

• Robert F. Hicks · Los Angeles, US
• Herbert D. Kaesz · Los Angeles, US
• Dagiang Xu · Los Angeles, US

Key dates

• Filing date: Oct 26, 1989
• Grant date: Jul 14, 1992
• Expiry date: Oct 26, 2009

Classification

• Technology area (CPC C): Chemistry; Metallurgy
• CPC primary: C23C16/18
• WIPO field: Organic fine chemistry
• WIPO sector: Chemistry

Abstract

A process for coating metal on a substrate. The process uses organometallic compounds such as (trimethyl)(cyclopentadienyl) platinum in the presence of a reducing fluid such as hydrogen gas to produce high purity films capable of selective deposition on substrates containing, for example, tungsten and silicon. The films are deposited using chemical vapor deposition (CVD) or gas phase laser deposition. The invention also comprises devices made from the process of the invention.