Post fabrication processing of semiconductor chips
US5130275A · kind A · utility
44Cited by
13References
23Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jul 2, 1990 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Jul 2, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for processing semiconductor chips which deters the formation of "tin whiskers" and which removes excess substrate material from the passive side of a semiconductor device is presented. The deterrence of tin whiskers is accomplished by controlling the size of the bead of flowable metal on the conductive bump. The removal of excess material from the passive side of the semiconductor device is accomplished by chemical reaction after the formation of the conductive bump.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.