Integrated semiconductor device with an insulated-gate field effect transistor having a negative transconductance zone
US5130763A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 19, 1990 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Jan 19, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH03K19/217
- WIPO fieldBasic communication processes
- WIPO sectorElectrical engineering
Abstract
An integrated semiconductor device, including an insulated-gate field effect transistor biased to a constant level, has a drain-source current characteristic as a function of the gate-source voltage which exhibits a negative transconductance zone beyond a maximum, the slopes of the characteristic on both sides thereof being substantially symmetrical so that two values of the gate-source voltage which are symmetrical with respect to said maximum correspond substantially to the same value of the drain source current, and in that the transistor comprises biasing means ensuring that its operating zone is situated in the region of said characteristic around said maximum.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.