Thin film transistor with a thin layer of silicon nitride
US5130772A · kind A · utility
32Cited by
1References
2Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 23, 1991 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Apr 23, 2011 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG02F1/1368
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is disclosed a thin film transistor, wherein the lengthwise direction of the source is made parallel to that of the gate, and an insulating layer is continuously deposited between double gates and the semiconductor layer to obstruct the pin holes generated during first deposition. Further, between overlapping semiconductor layers there is interposed an insulating layer to prevent short circuit of the electrodes due to the pin holes in the semiconductor layers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.