Monolithic semiconductor light emitter and amplifier
US5131001A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 21, 1990 |
| Grant date | Jul 14, 1992 |
| Priority date | — |
| Expiry date | Dec 21, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor light emitter comprising a substrate of a semiconductor material having a pair of opposed surfaces and a body of semiconductor material on one of the surfaces. The body includes a pair of clad layers of opposite conductivity types having an intermediate quantum well region therebetween. The clad layers are of a semiconductor material which forms a heterojunction with the material of the quantum well region. The clad layers and the quantum well region form a waveguide which extends along the body. A plurality of gain sections are formed in the body spaced along and optically coupled by the waveguide. Each of the gain sections is adapted to generate light therein when a voltage is placed thereacross. One of the gain section has gratings at each end thereof which are adapted to reflect light back into the one gain section and thereby create a beam of light. The grating between the one gain section and an adjacent gain section is adapted to allow some of the light generated in the one gain section to pass therethrough along the waveguide to the next gain section. Each of the other gain sections have gratings adjacent an end opposite the first gain sections. The periods …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.