Photovoltaic semiconductor device

US5131956A · kind A · utility

Assignees

• Mitsubishi Electric Corporation · JP
• NIPPON TELEGRAPH AND TELEPHONE CORPORATION · JP

Inventors

• Takahiko Oohara · Higashimurayama, JP
• Masaaki Usui · Tokyo, JP
• Nobuyoshi Ogasawara · Itami, JP
• Kotaro Mitsui · Kasai, JP

Key dates

• Filing date: Mar 28, 1991
• Grant date: Jul 21, 1992
• Expiry date: Mar 28, 2011

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02E10/547

Abstract

A photovoltaic semiconductor device includes a first conductivity type silicon substrate having a first main surface, a first conductivity type compound semiconductor layer disposed on a first, major portion of the first main surface of the silicon substrate, a second conductivity type compound semiconductor layer disposed on the first conductivity type compound semiconductor layer, a first electrode connected to the second conductivity type compound semiconductor layer, a portion of the first electrode being disposed on a second, minor portion of the first main surface of the silicon substrate with an intervening insulating film, and a second electrode disposed on a third, minor portion of the first main surface of the silicon substrate.