Process for depositing silicon dioxide films
US5132140A · kind A · utility
13Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 29, 1991 |
| Grant date | Jul 21, 1992 |
| Priority date | — |
| Expiry date | Jan 29, 2011 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC03C2218/111
- WIPO fieldMaterials, metallurgy
- WIPO sectorChemistry
Abstract
A process for depositing a silicon dioxide film on the surface of a substrate such as alkali-containing glass by bringing the substrate into contact with a treating solution comprising a hydrosilicofluoric acid solution supersaturated with silicon dioxide, which is obtained by heating a hydrosilicofluoric acid solution substantially saturated with silicon dioxide which has a temperature of not more than 0.degree. C., to a temperature of not less than 25.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.