Method of producing a bipolar CMOS device
US5132234A · kind A · utility
28Cited by
5References
4Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 9, 1991 |
| Grant date | Jul 21, 1992 |
| Priority date | — |
| Expiry date | Jul 9, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/009
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a bipolar CMOS device for providing a unipolar CMOS transistor with a polysilicon gate and a self-aligned NPN and VPNP transistor on a same chip, so that a high performance analog and digital BiCMOS device can be realized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.