Method of producing a superconductive oxide layer on a substrate
US5132280A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 1987 |
| Grant date | Jul 21, 1992 |
| Priority date | — |
| Expiry date | Sep 25, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S505/731
Abstract
A method of forming a superconductive metal oxide film on a substrate is disclosed. The method comprises depositing a metal layer on the substrate and heat treating the metal layer in an oxygen-containing atmosphere such that the oxide film is formed therefrom. The metal layer is deposited such that it is substantially free of reactive constituents, e.g., oxygen and/or fluorine, and such that it contains all the metal constitutents that are to be contained in the oxide film. Advantageously, the metal layer is deposited such that the various metal constituents (e.g., Y, Ba, and Cu) are substantially mixed. The inventive method simplifies deposition control since the densities of the metal deposits are well known and constant, and permits relatively rapid deposition (e.g., by DC sputtering) since the targets are not subject to oxidation. A multi-stage heat treatment process, with patterning of the oxide layer carried out at an intermediate stage of the process, that can result in improved pattern definition and can avoid deterioration of the oxide film as a consequence of the patterning, is also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.