Semiconductor device and manufacturing method thereof
US5132758A · kind A · utility
19Cited by
1References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 9, 1989 |
| Grant date | Jul 21, 1992 |
| Priority date | — |
| Expiry date | Feb 9, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a MOSFET of an LDD structure, a side wall is made conductive and connected to a gate through a resistance thereby to cause hot carriers taken into the side wall to be discharged to a gate through the resistance, whereby a channel resistance is prevented from being increased by an effect of carriers accumulated in the side wall. As a result, a reliable MOSFET with a short channel can be provided which is not degraded even if it is used for a long time.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.