Semiconductor device including interlayer insulating film
US5132774A · kind A · utility
22Cited by
7References
6Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 28, 1990 |
| Grant date | Jul 21, 1992 |
| Priority date | — |
| Expiry date | Nov 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The method of forming an interlayer insulating film insulating first and second layers of conductor patterns in a semiconductor device includes the steps of preparing a reaction gas including at least ozone and silicon alkoxide, wherein the ratio of ozone with respect to silicon alkoxide is adjusted to be not less than 5 within the reaction gas, and forming an insulating film by CVD reacting the reaction gas at atmospheric pressure at the temperature of 350.degree. C.-450.degree. C., whereupon the interlayer insulating film includes at least the insulating film formed by atmospheric pressure CVD reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.