Substrate used for fabrication of thick film circuit
US5134029A · kind A · utility
1Cited by
4References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1991 |
| Grant date | Jul 28, 1992 |
| Priority date | — |
| Expiry date | Jul 25, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/265
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
For improvement in heat radiation capability without sacrifice of affinity for a paste, a substrate used for fabrication of a thick film circuit has a multi-level structure having a foundation of an aluminum nitride and a surface film provided on the foundation, and the surface film is formed of an oxygen compound containing silicon atoms.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.