Schottky diode
US5135878A · kind A · utility
41Cited by
9References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 28, 1990 |
| Grant date | Aug 4, 1992 |
| Priority date | — |
| Expiry date | Aug 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/3025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A Schottky diode has a metal lead electrically connected to the Schottky contact layer wherein the metal lead is metallurgically bonded to the diode for increased reliability, the diode having a Ta--Si--N barrier layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.