Method of manufacturing silicon carbide FETS
US5135885A · kind A · utility
24Cited by
7References
12Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 27, 1990 |
| Grant date | Aug 4, 1992 |
| Priority date | — |
| Expiry date | Mar 27, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of manufacturing a semiconductor device comprises the steps of (i) forming a SiC monocrystal layer over the entire surface of a semiconductor substrate; (ii) forming a boron ion implanted layer, which is substantially a thin film, by implanting a specified amount of boron ions in the surface region of the SiC monocrystal layer; and (iii) forming a high resistance SiC monocrystal layer of a thin film by subjecting the boron ion implanted layer to heat treatment; whereby the high resistance SiC monocrystal layer can be function at least as an electric insulating layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.