Optical information memory medium including indium (In) and bismuth (Bi)
US5138572A · kind A · utility
5Cited by
6References
4Claims
0Family size
Assignee
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Key dates
| Filing date | Feb 20, 1991 |
| Grant date | Aug 11, 1992 |
| Priority date | — |
| Expiry date | Feb 20, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/165
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
Recording and erasing optical information can be done by using an alloy film capable of forming two stable crystalline states differing in crystal texture and optical characteristics by being irradiated with optical energies under different conditions. A thin memory film preferably including 60 to 90 atom % of Indium (IN) and 10 to 40 atom % of Bismuth (Bi) is formed on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.