Ridge-waveguide buried-heterostructure laser and method of fabrication
US5138626A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Sep 12, 1990 |
| Grant date | Aug 11, 1992 |
| Priority date | — |
| Expiry date | Sep 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S2301/176
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser structure achieves high reliability, good bandwidth and performance characteristics and a fabrication procedure that is compatible with other IC devices by providing an active lasing region below an optical mode confining ridge. The active region is preferably a multiple quantum well (MQW) that is sandwiched between upper and lower cladding layers. The portions of the MQW lateral to the ridge are compositionally disordered to give them a larger bandgap energy and lower refractive index than the active MQW region, and thus resist charge carrier spreading from the MQW. The ridge provides the primary optical mode confinement, allowing a shallow burial of the MQW to a depth less than 0.5 microns. This permits the compositional disordering of the lateral MQW regions to be performed by a heated ion implantation process that requires a lower temperature than separate implantation and annealing, and is compatible with the provision of additional circuitry on the same substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.