Silicon single crystal manufacturing apparatus
US5139750A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 14, 1991 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Jun 14, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T117/1068
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A silicon single crystal manufacturing apparatus which pulls a large-diameter silicon single crystal with improved yield and efficiency according to the rotary CZ method. As a means of preventing the solidification of molten silicon in the vicinity of a partition member, that is, one of factors which deteriorate the yield and efficiency, a heat shielding member having a predetermined position and shielding width is arranged to face a meniscus position of molten silicon thereby shielding the heat radiation from the meniscus portion. Its shape is a cylindrical shape, truncated-cone shape or a shape formed at its cylindrical bottom with a flange having a central opening. Its material primarily consists of a metal such as molybdenum or tantalum or an electric resistance heater.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.