Amorphous silicon photoelectric device
US5140397A · kind A · utility
24Cited by
5References
13Claims
0Family size
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Key dates
| Filing date | Feb 10, 1989 |
| Grant date | Aug 18, 1992 |
| Priority date | — |
| Expiry date | Feb 10, 2009 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A photoelectric device suitable for use as an image sensor includes a body of amorphous silicon and a pair of electrodes sandwiching the body. The amorphous silicon body includes at least one kind of oxygen, carbon, and nitrogen atoms and it has an ability to exhibit a predetermined level of photoconductivity for an optical bandgap of 2.0 eV or more. The amorphous silicon body may have either a mono-layered structure or a multi-layered structure. In the latter case, the body may have a p-i-n structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.