Capacitor method for improved oxide dielectric
US5141603A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 11, 1990 |
| Grant date | Aug 25, 1992 |
| Priority date | — |
| Expiry date | Oct 11, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01G4/10
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Capacitor structure capable of achieving increased energy storage density is disclosed together with a fabrication sequence for the capacitor and its anodic oxide dielectric material. Soft porous aluminum oxide which has been formed in a first anodization step and has been densified or transformed to hard barrier oxide in a second anodization step is preferred for the capacitor dielectric material. The first anodization may be performed in a sulfuric acid electrolyte while the second anodization may be performed in a boric acid electrolyte. The boric acid may be diluted with ethylene glycol. The disclosed capacitor is fabricated on a silicon wafer substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.