Power semiconductor component with emitter shorts
US5142347A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 15, 1990 |
| Grant date | Aug 25, 1992 |
| Priority date | — |
| Expiry date | Nov 15, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
Abstract
In symmetrically blocking thyristors and in diodes, a lowering of the storage charge at the anode side is desirable in some applications. This is achieved by shorts lying in the emitter zone of the anode side. These shorts are formed between zones of a first conductivity type embedded in the emitter zone and zones of a second conductivity type. The zones of the second conductivity type are deeper than those of the first conductivity type and partially overlap the zones of the first conductivity type. Given low current density, these shorts are ineffective; however, they are effective at high current densities. Shorts of this type can also be used at the cathode side in specific diodes that are to be utilized as free-wheeling diodes for GTO thyristors, and can also be employed in asymmetrical GTO thyristors at the anode side.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.