Semiconductor device which relieves internal stress and prevents cracking
US5144391A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 20, 1991 |
| Grant date | Sep 1, 1992 |
| Priority date | — |
| Expiry date | Feb 20, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/673
Abstract
A semiconductor device according to the present invention comprises a semiconductor thin film, and first and second insulator films formed in such arrangement that the semiconductor thin film being sandwiched therebetween. First and second graded layers each containing a constitutent element of the semiconductor thin film and impurities and having a content of the impurities decreased in the direction of the semiconductor thin film are interposed between the semiconductor thin film and the respective insulator films, thereby to relax internal stress produced in the junction interfaces of the semiconductor thin film and the insulator films and to prevent cracking from occurring in the junction interfaces.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.