Isotopically enriched semiconductor devices
US5144409A · kind A · utility
46Cited by
2References
25Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Nov 16, 1990 |
| Grant date | Sep 1, 1992 |
| Priority date | — |
| Expiry date | Nov 16, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/02461
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor structure including a single-crystal region composed of an isotopically enriched semiconductor material, and a semiconductor device formed in the isotopically enriched semiconductor region.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.