Method and structure for providing improved insulation in VLSI and ULSI circuits
US5144411A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 28, 1990 |
| Grant date | Sep 1, 1992 |
| Priority date | — |
| Expiry date | Sep 28, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved VLSI or ULSI structure and a method of forming the same are provided. The structure starts with a base member having a plurality of supports formed thereon and extending upwardly therefrom. A selectively removable material is deposited on the base member and around the supports. An insulating cap is formed over the supports and the removable material. Access openings are provided through the cover (or base) and the removable material is removed through the access openings. Thereafter a partial vacuum is formed in the space evacuated by the removable material, and the access openings sealed to provide a dielectric medium around the supports and between the base and cap member having a dielectric constant of less than 2.0.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.