Method for mirror passivation of semiconductor laser diodes
US5144634A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1991 |
| Grant date | Sep 1, 1992 |
| Priority date | — |
| Expiry date | Aug 21, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/0282
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method for passivating mirrors in the process of fabricating semiconductor laser diodes is disclosed. Key steps of the method are: (1) providing a contamination-free mirror facet, followed by (2) an in-situ application of a continuous, insulating (or low conductive) passivation layer. This layer is formed with material that acts as a diffusion barrier for impurities capable of reacting with the semiconductor but which does not itself react with the mirror surface. The contamination-free mirror surface is obtained by cleaving in a contamination-free environment, or by cleaving in air, followed by mirror etching, and subsequent mirror surface cleaning. The passivation layer consists of Si, Ge or Sb.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.