Fabrication of gunn diode semiconductor devices
US5145809A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Dec 4, 1990 |
| Grant date | Sep 8, 1992 |
| Priority date | — |
| Expiry date | Dec 4, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved method for manufacturing a semiconductor device is described. In the preferred embodiment, a Gunn diode is manufactured from InP active and buffer layers. The buffer layer is deposited on a GaAs substrate using an epitaxial deposition process and the active layer is deposited onto the buffer layer. Electrical connection to the InP layers is made by etching a via through the GaAs substrate and metallizing the walls of the via. After the device has been placed in its final package, the GaAs substrate material is removed. As a result, good thermal and electrical contact is made to the InP active layer, and therefore, a Gunn diode manufactured according to this invention can reliably produced greater output power.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.