Ferroelectric thin film material, method of deposition, and devices using same
US5146299A · kind A · utility
122Cited by
9References
41Claims
0Family size
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Key dates
| Filing date | Mar 2, 1990 |
| Grant date | Sep 8, 1992 |
| Priority date | — |
| Expiry date | Mar 2, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B53/00
Abstract
A ferroelectric device that comprises a polarizing thin film of BaMF.sub.4 deposited on a substrate. Ba is barium, M is one of the metals of the group consisting of iron (FE), manganese (Mn), cobolt (Co), nickel (Ni), magnesium (Mg), and zinc (Zn). The substrate is silicon, sapphire, or gallium arsenide. A non-volatile NDRO and DRO memory cell and methods for depositing the thin film. A method of depositing bismuth titanate on a substrate are described.
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