Patent · US Expired

Photovoltaic semiconductor device and method for manufacturing the same

US5147468A · kind A · utility

14Cited by
1References
12Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 13, 1991
Grant dateSep 15, 1992
Priority date
Expiry dateJun 13, 2011

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY02P70/50

Abstract

A semiconductor device has a plurality of unit photovoltaic elements arranged on a substrate and connected to each other in series. The photovoltaic device includes first semiconductor layers with low resistivity formed on a high-temperature-resistant insulating substrate and spaced apart at a predetermined interval and second semiconductor layers selectively formed on corresponding first semiconductor layers so that a part of the respective first semiconductor layer is exposed. The second semiconductor layer is not in contact with the first semiconductor layer of an adjacent unit photovoltaic element. An electrode formed on the second semiconductor layer is in contact with the first semiconductor layer of the adjacent unit photovoltaic element. As a result, there is provided a photovoltaic semiconductor device comprising a plurality of unit photovoltaic elements connected to each other in series with high conversion efficiency and which is not easily degraded by light irradiation.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.