Electronic devices
US5147501A · kind A · utility
2Cited by
4References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 12, 1990 |
| Grant date | Sep 15, 1992 |
| Priority date | — |
| Expiry date | Jan 12, 2010 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J1/3042
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
In the production of micron-size pyramid emitters for field emission devices, a first layer of electrically-conductive material, such as single crystal silicon or metal, is etched to form column-like structures each of which tapers from each end of the column towards an intermediate portion along its length. A second conductive layer is formed in contact with the free ends of the columns, and etching of the columns is then resumed until the intermediate portion of each column is etched through, leaving a pair of pyramid emitters pointing towards one another and supported by the respective conductive layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.