Method of manufacturing an LDDFET having an inverted-T shaped gate electrode
US5147814A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 22, 1991 |
| Grant date | Sep 15, 1992 |
| Priority date | — |
| Expiry date | Jul 22, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/605
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having an insulating film on a semiconductor substrate, first and second conductive gate electrode films and first and second source/drain regions having impurities and disposed opposite to each other. A length of the second gate electrode is smaller than that of the first one. The device further includes side wall insulating films formed bilaterally of the gate electrodes. A method of manufacturing the semiconductor device, involving the steps of forming the insulating film on the substrate, first and second conductive films and an MOS transistor gate electrode, effecting thermal annealing thereon, and performing ion-implantation of first and second impurities into the substrate with the gate electrode serving as a mask. The method further involves the step of forming a side-wall insulating film by effecting anisotropic etching.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.