Plasma processing method for improving a package of a semiconductor device
US5147822A · kind A · utility
41Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 25, 1991 |
| Grant date | Sep 15, 1992 |
| Priority date | — |
| Expiry date | Feb 25, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/181
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An electronic device comprising a substrate having a frame, a metal lead and electronic parts in a bonding structure, and a molding of an organic resin formed on the substrate, wherein the surface of the organic resin is provided with a hardened water-resistant or carbonaceous film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.