Semiconductor device having thin film wiring layer of aluminum containing carbon
US5148259A · kind A · utility
45Cited by
10References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 31, 1991 |
| Grant date | Sep 15, 1992 |
| Priority date | — |
| Expiry date | Jul 31, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/937
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises one or a plurality of thin film wiring layers made of aluminum containing carbon, so as to obtain hillock-free wiring layers. A method of forming the thin film wiring layer employs a plasma-enhanced chemical vapor deposition or a magnetron-plasma chemical vapor deposition to form the thin film wiring layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.