Semiconductor-to-metal optical switch for power limitation in the infrared
US5149957A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 21, 1991 |
| Grant date | Sep 22, 1992 |
| Priority date | — |
| Expiry date | Aug 21, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10F77/247
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor-to-metal optical switch or device for power limitation in the infrared spectral region includes two thin semiconductor layers sandwiched between two transparent electrodes. An electrical voltage is applied across the two semiconductor layers to produce an active device for blocking incident light in the 8 to 12 .mu.m spectral region. The material composition and thickness of the two semiconductor layers are such that enough photo-excited electrons are generated in the first semiconductor layer so that the second semiconductor layer undergoes a rapid semiconductor-to-metal transition at a predetermined light intensity. The semiconductor layers remain transparent below the predetermined light intensity and the second layer will become metal-like at a light intensity above a threshold level. Upon becoming metal-like, the second semiconductor layer will block the incident light. The first semiconductor layer can be made from a material such as mercury cadium telluride and the second semiconductor layer can be made from a material such as germanium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.