Schottky diode structure with localized diode well
US5150177A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 6, 1991 |
| Grant date | Sep 22, 1992 |
| Priority date | — |
| Expiry date | Dec 6, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/917
Abstract
An improved Schottky diode structure (4) is formed by retrograde diffusing an N.sup.+ concentration of relatively fast diffusing atoms, preferably Phosphorus atoms, to form a localized diode NWell (6) as the diode substrate for the diode. A buried diode layer (5) formed of relatively slow diffusing N type atoms, preferably Antimony atoms, underlies the diode NWell and electrically couples the diode junction (7) to the diode ohmic contact (9). A diode ohmic contact region (31) underlies the ohmic contact, further coupling the diode junction to the ohmic contact. Preferably, the diode junction is a Platinum-Silicide junction. The improved Schottky diode structure may be formed as part of a BICMOS integrated circuit fabrication process wherein the buried diode layer may be formed at the same time as a buried collector layer of a bipolar transistor structure, the diode NWell may be formed at the same time as an NWell of a CMOS transistor structure and the diode ohmic contact region may be formed at the same time as a collector sink region. In the BICMOS fabrication process the buried collector layer definition mask is also a buried diode layer definition mask, the retro NWell definitio…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.