Method for forming window material for solar cells and method for producing amorphous silicon solar cell
US5151255A · kind A · utility
6Cited by
5References
6Claims
0Family size
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Key dates
| Filing date | Oct 3, 1990 |
| Grant date | Sep 29, 1992 |
| Priority date | — |
| Expiry date | Oct 3, 2010 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02P70/50
Abstract
A method for forming a dihydride rich amorphous silicon semiconductor film suitable for use as a window material of solar cells only from a silicon material, which comprises decomposing a gaseous mixture composed of disilane, a dopant capable of imparting p-type electrical conductivity and a diluent gas by applying a glow discharge energy, and thereby forming a semiconductor film having an optical band gap of at least 1.8 eV, preferably more than 1.9 eV, on a substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.