Amorphous silicon switch with forming current controlled by contact region
US5151384A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jan 14, 1991 |
| Grant date | Sep 29, 1992 |
| Priority date | — |
| Expiry date | Jan 14, 2011 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/90
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of making an electrical device comprising two electrodes and a body of a switching material formed by reacting amorphous silicon or silicon compound with a passivating agent to remove or reduce the number of unpaired electrons occuring therein. The method includes a forming step in which a forming current is passed through the amorphous silicon layer so as to form an n- or p- doped amorphous silicon layer adjacent to one of the electrodes. The doped silicon layer extends over part only of the device so that the forming current is at most 400 mA. The device exhibits a voltage controlled negative resistance (VCNR) and may be employed for example for transient protection.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.