Image sensor having an array of operative and dummy bipolar transistors and pairs of pixel selecting switches connected thereto
US5151587A · kind A · utility
66Cited by
1References
14Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 4, 1991 |
| Grant date | Sep 29, 1992 |
| Priority date | — |
| Expiry date | Jan 4, 2011 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH04N25/76
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
The image sensor is comprised of an array of operative bipolar transistors. Another array of optically shielded dummy bipolar transistors are formed adjacently to the operative bipolar transistors. Reset switches are connected to base regions of the operative and dummy bipolar transistors so as to reduce variation in dark image output, to ensure linearity of output signal, and to eliminate image storage.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.